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www.irf.com 1 IRLR3714PBF irlu3714pbf smps mosfet hexfet power mosfet notes through are on page 10 applications benefits ultra-low gate impedance very low r ds(on) at 4.5v v gs fully characterized avalanche voltage and current high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use high frequency buck converters for computer processor power pd - 95554a lead-free symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v 36 i d @ t c = 70c continuous drain current, v gs @ 10v 31 a i dm pulsed drain current 140 p d @t c = 25c maximum power dissipation 47 w p d @t c = 70c maximum power dissipation 33 w linear derating factor 0.31 w/c t j , t stg junction and storage temperature range -55 to + 175 c absolute maximum ratings thermal resistance parameter typ. max. units r jc junction-to-case ??? 3.2 r ja junction-to-ambient ??? 50 r ja junction-to-ambient (pcb mount) ??? 110 c/w d-pak irlr3714 i-pak irlu3714 v dss r ds(on) max i d 20v 20m ? 36a
irlr/u3714pbf 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? showing the i sm pulsed source current integral reverse (body diode) ??? p-n junction diode. ??? ??? 1.3 v t j = 25c, i s = 18a, v gs = 0v ??? 0.88 ??? t j = 125c, i s = 18a, v gs = 0v t rr reverse recovery time ??? 35 53 ns t j = 25c, i f = 18a, v r =10v q rr reverse recovery charge ??? 34 51 nc di/dt = 100a/s t rr reverse recovery time ??? 35 53 ns t j = 125c, i f = 18a, v r =10v q rr reverse recovery charge ??? 35 53 nc di/dt = 100a/s parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0 .022 ??? v/c reference to 25c, i d = 1ma ??? 15 20 v gs = 10v, i d = 18a ??? 21 28 v gs = 4.5v, i d = 14a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 16v, v gs = 0v ??? ??? 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 72 mj i ar avalanche current ??? 14 a avalanche characteristics s d g diode characteristics symbol parameter min. typ. max. units conditions g fs forward transconductance 17 ??? ??? s v ds = 10v, i d = 14a q g total gate charge ??? 6.5 9.7 i d = 14a q gs gate-to-source charge ??? 1.8 ??? nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 2.9 ??? v gs = 4.5v q oss output gate charge ??? 7.1 ??? v gs = 0v, v ds = 10v t d(on) turn-on delay time ??? 8.7 ??? v dd = 10v t r rise time ??? 78 ??? i d = 14a t d(off) turn-off delay time ??? 10 ??? r g = 1.8 ? t f fall time ??? 4.5 ??? v gs = 4.5v c iss input capacitance ??? 670 ??? v gs = 0v c oss output capacitance ??? 470 ??? v ds = 10v c rss reverse transfer capacitance ??? 68 ??? pf ? = 1.0mhz v sd diode forward voltage static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance 3 6 140 m ?
irlr/u3714pbf www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 25c vgs top 15v 10v 4.5v 3.0v 2.7v 2.5v 2.2v bottom 2.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.0v 20s pulse width tj = 175c vgs top 15v 10v 4.5v 3.0v 2.7v 2.5v 2.2v bottom 2.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 36a 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 20s pulse width
irlr/u3714pbf 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.01.02.03.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 4 8 12 16 20 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 14a v = 10v ds v = 16v ds
irlr/u3714pbf www.irf.com 5 fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 t , case temperature ( c) i , drain current (a) c d limited by package
irlr/u3714pbf 6 www.irf.com q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 30 60 90 120 150 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.9a 10a 14a
irlr/u3714pbf www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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irlr/u3714pbf 8 www.irf.com

12 in the assembly line "a" as s e mb l e d on ww 16, 1999 example: wit h as s e mb l y t his is an irfr120 lot code 1234 year 9 = 199 9 dat e code we e k 16 part number logo internat ional rect if ier as s e mb l y lot code 916a irfu120 34 year 9 = 1999 dat e code or p = de s i gnat e s l e ad-f r e e product (optional) note: "p" in as s embly line pos ition indicates "l ead-f ree" 12 34 we e k 16 a = as s e mb l y s i t e code part number irf u120 line a logo lot code as s e mb l y int ernat ional rectif ier
irlr/u3714pbf www.irf.com 9

as s e mb l y example: with assembly this is an irfu120 ye ar 9 = 199 9 dat e code line a week 19 in the assembly line "a" as s e mbl e d on ww 19, 1999 l ot code 5678 part number 56 irfu120 international logo rectifier lot code 919a 78 note: "p" in as s embly line position indicates "lead-free" 56 78 as s e mb l y lot code rectifier logo international irfu120 part number we e k 1 9 dat e code year 9 = 1999 a = as s e mb l y s i t e code p = designates lead-free product (optional)
irlr/u3714pbf 10 www.irf.com data and specifications subject to change without notice. these products have been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/05 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.69 mh r g = 25 ? , i as = 14a. pulse width 400s; duty cycle 2%.
when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. calculated continuous current based on maximum allowable junction temperature; package limitation current is 30a

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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